A 70-80 GHz Image Rejection Resistive Mixer using 0.1um GaAs pHEMT Technology

This paper presents a MMIC image rejection resistive mixer in 70–80 GHz frequency range. The WIN (WIN Semi-conductors Corp.) 0.1 um GaAs pHEMT technology provides W-band high performance FET under high power. The mixer uses Hartley topology and takes advantage of the high linearity of the resistive cold-FET. Within 70–80 GHz, the input third-order inter-modulation point (IIP3) is higher than 21 dBm and the conversion loss is lower than 11.9 dB. The LO-RF isolation is higher than 30 dB above 72GHz and the image rejection ratio is above 20 dBc.