On-Chip Wideband Bandpass Filter with High Frequency Selectivity and Low Insertion Loss Based on GaAs Integrated Passive Device Technology

In this paper, an on-chip wideband bandpass filter (BPF) with high frequency selectivity and low insertion loss is proposed using gallium arsenide (GaAs) integrated passive device (IPD) technology. Multiple transmission zeros can be provided by the capacitors loaded on the series and parallel LC resonators for the proposed design. Comparing with the state-of-the-art on-chip wideband BPFs, the proposed design has the advantages of high frequency selectivity and low loss. The final filter centered at 1.93 GHz with the 3-dB fractional bandwidth of 64.2% is demonstrated, which exhibits the excellent shape factor (30-dB BW/3-dB BW) of 1.28 and the minimum insertion loss of 1.17 dB.