An 18-40Hz GaN Power Amplifier MMIC Utilizing Passive and Active Matching

A K-/Ka-band power amplifier (PA) MMIC, fabricated with an advanced
$0.15\mu \mathrm{m} \ \text{GaN}$
HEMT technology process, is developed and evaluated for multioctave operation in this paper. The impedance position of the transistor is accurately controlled by the combination of passive and active matching circuit. The ultra-wideband (UWB) P A demonstrates a power added efficiency (PAE) of 19% to 27% with a saturated power gain of 17 dB and an output power of 40.7-43 dBm from 18 to 40GHz at a drain voltage of 20V at 1ms pulse width with 10% duty cycle. The chip dimension is 3.7mm x 4.4 mm (16.28 mm
²
).