A U-Band Low-Noise Amplifier MMIC in 100-nm GaN Process

In this paper, we demonstrate a 100-nm GaN low-voltage low noise amplifier (LNA) MMIC operating in the frequency range of 40 to 65 GHz. The suggested LNA achieves a gain flatness of less than 1.5 dB and a small signal gain of 20.5 dB throughout the whole bandwidth. The Sl1 and S22 both fall below -10 dB. Between 50 and 65 GHz, the noise figure (NF) approaches an average value of 2.7 dB. Moreover, a 5 V supply can provide 350mW dc power consumption with an average I-dB compression point output power (OP1dB) of greater than 15 dBm in U-band. As a result, it may not only be crucial for the front-end link of the communication transceiver but also as the driver of the transmitter's power amplifier.