Simulation of electrolytic capacitance for the oxide-based electric-double-layer transistors

The recent advancement of oxide-based electric-double-layer transistors (EDLTs) is exciting in many aspects, but further development requires a better understanding of their physical nature. Since the electrolytic capacitance dominates the unique properties of EDLTs, its understanding has become a critical issue in this area. This study simulated electrolytic capacitance using the ion drift-diffusion model and compared it with actual measured data. Ion concentration was identified as the most significant factor affecting the quasi-static EDL capacitance. And in addition to that, ion diffusion coefficient and electrolyte thickness also impact the frequency dependence of the EDL capacitance and, consequently, the transient response of EDLTs.