Off-State Characteristics of Polycrystalline Silicon Thin-Film Transistors under Self-Heating Stress

In this work, off-state characteristics of polycrystalline silicon (poly-Si) thin-film transistors (TFTs) under self-heating (SH) stress are tentatively studied. The difference between drain voltage and gate voltage dramatically affects the characteristics of off-state current in poly-Si TFTs. Defect generation caused by the SH effect and electric field distribution across the drain junction may be jointly responsible for the observed degradation phenomena.