Modulation the properties of MoTe₂-based inverter by phase transition engineering

Phase transition from the semiconducting hexagonal (2H) phase to the metallic monoclinic (IT’) phase in two-dimensional (2D) transition metal dichalcogenides (TMDs) like MoTe₂ is not only of great importance in fundamental study but also of technological significance for broad device applications. In this paper, we demonstrate a method for modulating the performance of complementary inverters based on transformation engineering by laser burning. The performance of the inverter is compared by phase transition of MoTe₂ in different regions of the MoTe2-MoS2 heterostructure complementary inverter heterostructure (i.e. electrode and channel regions), and it is found that the gain of the inverter after the phase transformation at the electrode region is higher. The proposed method to control the function of complementary inverters by laser phase transition is of great significance for the application of two-dimensional materials in logic devices.