The Verification of TDDB Acceleration Model in Ultrathin Gate Dielectric

The usage of Time-dependent dielectric breakdown (TDDB) acceleration model has intensively debated for many decades. According to JEP122H, the thickness of gate dielectric (GD) between 2 ~ 4 nm is the controversial area, as power law model is used for thickness under 2 nm while E model for above 4 nm. Choosing appropriate acceleration model is significant in lifetime projection, thus we took three experiments to verify which model was the appropriate one between 2 ~ 4 nm. Moreover, as each model has its own physical mechanism, it would be helpful to know more about the detail of dielectric breakdown.