A Real-Time Detection Method For Wafer Probe Reference Die Shift

Wafer-level Probe is a fundamental process in the semiconductor backend manufacturing that intends to sort out good and bad dies by electrical testing then write die locations with bin codes in a wafer map. With the rapid miniaturization of integrated circuits (IC), Probe Reference Die Shift (RDS) event has become a big talking point recently in semiconductor backend factories. Known methods of Probe-RDS detection are based on analysis of a fully tested wafer map, which happens post-stage. This paper proposes a method of real-time detection on Probe-RDS by introducing an optimized test path and zonal algorithms. The experimental results proved good accuracy of Probe-RDS detection in the extremely early stage as anticipated.