HFXZR1-XO2 Ferroelectric Thin Film Grain Size Tuning via Annealing Ramp Rate Achieving Endurance >109 Cycles, 2PR of 40.6μC/CM2, Write Voltage Down to 1.5 V, and Switching Speed of 30 NS

The effect of annealing temperature ramp rate on the grain growth in $\mathrm{H}\mathrm{f}_{\mathrm{x}}\mathrm{Z}\mathrm{r}_{1-\mathrm{x}}\mathrm{O}$ (HZO) ferroelectric thin film is investigated. Using X-Ray Diffraction (XRD) characterization, we find that the ferroelectric phase grain size and uniformity can be improved when the temperature ramp rate is decreased. When fabricated in a MIM capacitor structure, the device can achieve $2P_{r}$ of $\sim 40.6\mu \mathrm{C}/\mathrm{c}\mathrm{m}^{2}$ better crystalline uniformity as compared to the other devices. Consequently, endurance exceeding $10^{9}$ cycles, 30 ns switching speed, polarization voltages down to 1.5V, and multi-states were demonstrated, paving the path for its use in high performance storage and computing applications.