Research Progress and Challenges of Chemical Mechanical Polishing for Silicon Carbide Wafer

Silicon carbide (SiC), as the representative of 3rd generation semiconductor materials was widely used in many sophisticated technology fields. As the essential substrate materials, SiC wafer requires an atomic-level ultra-smooth surface. However, chemical mechanical polishing (CMP) efficacy was frequently limited by its high hardness, strength and chemical stability. Exploiting the CMP process can benefit for the enhancement of polishing efficiency. Herein, we summarized the recent progress for SiC wafer CMP, with a special emphasis on the characteristics and mechanisms. Future challenges and opportunities are also discussed in detail. We believe these SiC CMP technologies offer a good chance for the production translation.