Characterization of Field Cycling Fatigue in HfZrOx Ferroelectric Capacitors

In this paper, the fatigue behavior of $\mathrm{H}\mathrm{f}\mathrm{Z}\mathrm{r}\mathrm{O}_{\mathrm{x}}$ (HZO) ferroelectric (FE) capacitor is thoroughly characterized. By proposing an empirical model applicable to the entire process of fatigue, we found that the fatigue effect is dominated by the process of charge migration to non-switching regions and charge exchange with electrodes to form the localized built-in field and cause domain-pinning.