A New Method To Calculate Loading Effect in Embedded Flash

Loading effect is a very common phenomenon in IC manufacture process, such as etch process, diffusion process and thin film process, etc. In many cases, process recipe is designed to ensure enough process window to cover different level of loading effect, which is originated from various end customer applications which lead to diverse layout. In some cases, process recipe should be chosen precisely base on specific loading effect to gain best process window and product yield due to rigid device performance requirement. In this paper, the difficulty of loading effect calculation in embedded flash is introduced and a new method of calculation is discussed.