Large Area CVD Mos2 Memristor Suitable for Neuromorphic Applications

Two-dimensional materials (2DMs) are promising candidates for future electronics due to their atomic thickness and excellent electronic properties. 2DMs based memristors possess unique properties to achieve low operating voltages and efficient switching. In this work, we report on CVD grown, 5-layers MoS
2
memristors based crossbar array via transfer approach. The MoS
2
memristors show forming free, bipolar resistive switching, operating voltages of 0.7 V, and analog states. The resistive switching mechanism of the MoS
2
memristors are revealed to be space charge limited conduction (SCLC) and conductive filament operation mechanism via I-V analysis. Our results pave the way towards enabling large-area 2DMs memristor crossbar array in future neuromorphic applications.