Design and Current Balancing Optimization of A 1700V/1000A Multi-chip SiC Power Module

The rated current of a single SiC MOSFET is always less than 100A at a voltage rating higher than 1.2kV. Therefore, plenty of SiC MOSFET dies paralleled as multichip power modules to increase the current capacity. However, due to the asymmetric layout and the difference between chip parameters, there will be severe current imbalance in power modules, affecting the reliability. This paper presents a multi-chip 1700V/1000A SiC power module, consisting of 18 paralleled chips in each switch of the half-bridge topology. A serial of current balancing optimization method is proposed, including chip classification, the optimization of layout, power terminals and driver loop. Finally, the double pulse test (DPT) is conducted to verify the performance of the power module.