A 25–40 GHz Low Conversion Loss Passive Ring Mixer in a 45 nm CMOS Silicon-on-Insulator Technology

Low conversion loss passive mixers make the wireless receiver system achieve low noise performance and high sensitivity. The ring mixers have good performances in isolation and linearity, but high conversion loss. In this work, a 25–40 GHz low conversion loss passive ring mixer using a 45 nm complementary metal-oxide-semiconductor (CMOS) silicon-on-insulator (SOI) technology is presented. The conversion loss and 1dB compression point of the mixer are optimized in the view of local oscillator (LO) power and transistor size. The mixer exhibits a conversion loss of less than 7.2 dB and an input 1-dB compression point of I dBm. Besides, the LO-IF and LO-RF ports isolation are better than 38 and 45 dB, respectively.