A L-Band High Gain Amplifier Module Using 3D SiP Technology

3D SiP technology is one of key technologies for miniaturization in semiconductor technology. This paper presents a high gain and high stability amplifier module based on 3D SiP technology. To achieve high density integration, silicon-based substrate with cavities is used on which the MMIC chips are integrated. Also, a wideband low noise amplifier chip is designed. In addition, stability of amplifier module is analyzed and simulated. Moreover, self-excitation problem is solved. This RF amplifier module achieves good performance in L-band (0.5-2GHz) and has a relative bandwidth of more than 1.5 octaves. The results shows that the signal gain of SiP module is more than 62 dB, the noise figure is less than 3.2 dB, input VSWR is less than 1.5 and output VSWR is less than 1. S. By means of SiP technology, the proposed package occupies an area of only 15mm×11mm.