1200V SiC MOSFET and IGBT Drive Protection Circuit Design

With the rapid development of power electronics technology and the increasing application requirements, the power electronics devices represented by SiC and other materials have come into people's view, and the study of gate drive and protection technology of IGBT and SiC MOSFET, as the two most widely used and researched power electronics devices, is of great significance to the application of both. This paper compares the parameter characteristics of IGBT module (FF300R12KT4) and SiC MOSFET module (CAS300M12BM2) in detail, points out the differences in the design of driving and protection circuits between IGBT and SiC MOSFET of the same power level, and builds corresponding driving and protection circuits according to the differences between them. Finally, the driving protection circuits of IGBT and SiC MOSFETs are compared and tested by a double-pulse test platform to verify the reliability and advancedness of the driving protection circuits designed in this paper. The effects of $\mathrm{R}_{\mathrm{G}}$, CG, and LG on the switching process of power devices are elaborated, and the results show that RG and CG have more effects on SiC MOSFETs and cause strong waveform oscillations, which illustrate the results show that RG and CG have more influence on SiC MOSFETs and cause strong oscillation of waveform, which shows the non-interchangeability between IGBT and SiC MOSFET drive protection circuits, and also provides a reference for setting the circuit parameters of two drive protection circuits.