Effect of 181Ta Heavy Ion Irradiation on SiC MIM Capacity

This paper mainly studies the DC characteristics of SIC MIM capacitance with different surface passivations under the irradiation of ${}^{181}\mathrm{Ta}$ heavy ions. With the same basic device structure, irradiation will increase the leakage current of capacitor when using SiN or SiN+PI surface passivations. Meanwhile, the surfaces of these passivation layers appear irreversible damage. However, the capacitor using SiN+BCB passivation layer does not have this phenomenon. The DC performance of all samples will be resumed to the initial state after long standing time at room temperature.