Numerical Modelling and Characterization of Active Silicon Ring Resonators

Silicon ring resonators are important components that can be fabricated using photonic IC (PIC) technologies and have found several applications in the realization of high-speed modulators, all-optical filters, reservoir computing, and photon pair generation. Several nonlinear effects like thermal, free-carrier, Kerr, and two-photon absorption affect the performance of these resonators. The dynamical modeling of ring resonators is necessary to characterize the fabricated rings and to use the proper physical parameters for the desired application. This paper will review recent progress in static and dynamic modeling of ring resonators. These models are used to characterize the active silicon ring resonators which were previously designed and fabricated.