Characteristics of a Dual-Gate Junction-less Transistor

The junctionless transistor presents a promising alternative to conventional MOSFETs due to its simpler structure and reduced fabrication complexity, offering potential advantages in terms of controllability. This study focuses on the design and implementation of a junctionless field-effect transistor using COMSOL Multiphysics software. Two types of junctionless transistors were designed and simulated, a single-gate junctionless transistor (SGJLT) and a double-gate junctionless transistor (DGJLT), with constant doping concentration, channel length, and temperature. Further, current-voltage characteristics were analyzed for various gate and drain voltages. The threshold voltage of the DGJLT is 38.46 % less than the SGJLT. At zero gate voltage, the DGJLT has a leakage current that is 69.63% lower than that of the SGJLT. The results demonstrate that the proposed junctionless transistor exhibits a high on/off ratio and a low subthreshold swing, which are desirable characteristics for efficient transistor operation. The future study and implementation of JLTs have the potential to impact a wide range of technologies, from conventional electronics to emerging applications in areas such as wearable electronic devices, Internet of Things (IoT), and artificial intelligence (AI).