Frequency and Temperature Dependence Brownmillerite Perovskite KBiFe2O5 For Thermo-electronic Application

In this communication, fabrication (solid-state reaction route) of a brownmillerite perovskite electronic component KBiFe
2
O
5
(KBFO) is reported. The material has monoclinic crystal symmetry having space group P2
1
. A detailed study of microstructure and compositional analysis of the sample by using scanning electron microscopy (SEM) and EDX (energy dispersive X-rays) spectrum has provided the quality of the electronic component. The topology of the electronic component suggests the compactness of the material surface. The high dielectric constant and low tangent loss are applicable for the fabrication of various electronic devices. In Nyquist plot, the equivalent circuit (CQR) is used for grain impact and (CQR) (CQR) has emphasis on the grain boundary contribution of the electronic material. The resistance decreases with an increase in temperature supporting the NTCR (negative temperature coefficient of resistance) behavior. Higher thermistor constant (ß) and lower temperature coefficient resistance are applicable for thermo-electronic devices