Design and Simulation of Low Noise Amplifier for Sub-6GHz 5G Application

In this paper, a single stage Low Noise Amplifier (LNA) based on MMIC technology is proposed. A Ga N HEMT transistor is chosen to achieve the required peak gain of 15.5dB and minimum noise figure of 0.22 dB at 2.4GHz. The device is unconditionally stable in its operating frequency range to avoid oscillations. The designed amplifier has simple input and output matching networks. Since the chosen HEMT transistor is wideband device operating between 0 to 6GHz and proposed model is simple, It is well suitable for sub-6GHz 5G applications like ISM band, GPS receivers, cordless phones, WLANs and space communications.