A Study on influence of geometric parameters in Gate All Around Transistors

An alternative technology for CMOS technology is needed for low power high speed switching applications. Endless scaling demand of devices and systems have raised integration complexity along because of underlying second order effects of conventional MOSFET. A deeper analysis of the influence of various geometric as well as material parameters on the device performance is required. A thorough study on emerging devices like nanowire, which tallies the counter-effects of scaling and performance is done in this paper. The device is examined through different performance parameters like the minimum V
TH
, I
ON
and subthreshold slope based on variation of geometric parameters and work function of gate terminal.