A 5-DC-parameter MOSFET model for circuit simulation in QucsStudio and SPECTRE

A minimalist MOSFET model for circuit simulation with only five DC parameters written in Verilog-A is presented. The five parameters can be extracted from direct and simple methods in common circuit simulators. The DC characteristics of transistors in both 180-nm bulk CMOS and 28-nm FD-SOI technologies generated by the five-parameter model are compared with those generated by the BSIM and UTSOI2 models, respectively. The simulation of some basic circuits using the proposed 5-DC-parameter MOSFET model shows good matching with the simulation using the BSIM model, at the benefit of a much simpler set of DC parameters.