Circuit Synthesis of a 140–220 GHz Low-Noise Amplifier in 130 nm SiGe BiCMOS

The synthesis of a broadband LNA operating at THz-frequencies is presented. The overall synthesis time does not exceed 2.5 hours. To the best of the author’s knowledge, this work presents the first ever published synthesis of a THz LNA circuit. The synthesized LNA provides more than 15 dB gain over a frequency range from 140–220 GHz with a 3dB-bandwidth of 70 GHz from 150–220 GHz. The minimum noise figure is 8.2 dB and a maximum P
1dB
of −1.5 dBm can be achieved in simulation.