Effect of O2 Exposure on Silicon Field Emitter Arrays Style

The impact of Oxygen (O
2
) exposure on Silicon Field Emitter Arrays (Si-FEA) was studied. A 50×50 array of Silicon field emitters was tested at 1000V DC anode and 45V DC gate voltage in 6×10
⁻¹⁰
Torr before 10–
⁷
Torr partial pressure of O
2
was introduced into the chamber. The results indicate that the anode current degradation rate is approximately 0.1 percent per Langmuir of O
2
exposure. This study can provide guidelines for the vacuum packaging requirements of Si-FEAs.