Electron Beam Induced Growth of Carbon Nanotips on Tungsten and Silicon Fieldemitters

In our experiments we grew electron emitting carbon nanostructures on tungsten tips. Subsequently, we transferred the growth process to pre-structured phosphorus-doped n-type silicon and obtained emitting carbon nanostructures directly grown on silicon. After growth of the nanostructures, the silicon field emitters showed increased emission currents of 76 nA at 1.1 kV (compared to 6 nA under the same conditions before growth).