5.8 GHz band 10 W rectenna with GaAs E-pHEMT gated anode diode on the aluminum nitride antenna for thermal dispersion

In this paper, the 5.8 GHz band 10 W rectenna is demonstrated. The GaAs bridge rectifier IC with GaAs E-pHEMT gated anode diodes (GADs) is employed to obtain input power of 10 W. The IC is directly connected with the inductive high-impedance antenna to reduce circuits’ loss. Furthermore, the antenna is implemented on the aluminum nitride (AlN) substrate for thermal dispersion. With migrated circuit functionalities, simulated radiation efficiency of the antenna is 99.2 %. Measured rectification efficiency of the rectifier is 83.7 % at input power of 10 W. This is the top performance among 10 W class rectifies