A W-Band Phase-Shifter-Embedded PA in 40-nm CMOS for 6G Applications

A phase-shifter-embedded (Δφ-embedded) power amplifier (PA) incorporating multifunctional Δφ-embedded impedance matching networks (IMN) is proposed for 6G applications. The Δφ-embedded IMN can realize impedance transformation, execute a single-ended to differential conversion, and simultaneously provide a phase shift without requiring additional circuits. Hence, the insertion loss, occupied chip area, and power dissipation can be reduced. Realized in a 40-nm digital CMOS process, the proposed PA can provide a maximum saturated output power of 10.2 dBm and a phase-shifting range wider than 90° from 75 to 89 GHz. The power consumption is 151 mW from a 1.1-V supply.