Recent Advances in GaN HEMT Modeling using Fermi Kinetics Transport

Gallium nitride (GaN) high electron mobility transistors (HEMTs) are a critical technology for radio frequency (RF) power amplifier and low noise amplifier integrated circuits. An important aspect of GaN device engineering is accurate physics-based simulations of the transistors. Technology computer aided design (TCAD) simulations are a staple of device engineering. However, wide bandgap semiconductors like GaN pose considerable challenges for accurate TCAD simulations. This presentation will provide a detailed overview of the Air Force Research Laboratory's custom TCAD solver called Fermi kinetics transport (FKT) and its application to accurate simulations of GaN HEMTs.