Vertically Stacked Ge Diamond-shape Nanowires GAAFET with Ferroelectric HZO

We report the vertically stacked Ge diamond-shape nanowires (NWs) gate-all-around field-effect transistor (GAAFET) with ferroelectric (Fe) layer HZO
$=2$
nm
$/\mathbf{Al}_{2}\mathbf{O}_{3}=4$
nm. The in-situ ALD ozone treatment is applied to reduce the interface defect density (Dit). Furthermore, the transfer
$\mathbf{I}_{\mathbf{D}}$
1
D
- V
G
curves of the device shows superior performance with a minimum steep sub-threshold slope
$(\mathbf{SS}_{\text{MIN}})$
of 49
$\mathbf{mV}/\mathbf{dec}$
. The formation of the vertically stacked Ge diamond-shape NWs Fe-GAAFET could be compatible with current CMOS technology platform and have high potential for high-performance IC applications.