Green Laser Crystallized Poly-Si Thin-film Transistor and CMOS Inverter using Hfo2-Zro2 Superlattice Gate Insulator and Microwave Annealing for BEOL Applications

We report the BEOL compatible poly-Si thin-film transistor (TFT) below 400°C by green laser crystallization and microwave annealing. The TEM image reveals the
$\mathbf{HfO}_{2}-\mathbf{ZrO}_{2}$
superlattice (SL-HZO) structure of the dielectric layer. The p- type device shows good electrical properties, including
$\mathbf{I}_{\text{ON}}/\mathbf{I}_{\text{OFF}}$
ratio
$> 10^{6}$
, subthreshold swing (SS) = 75 mV/dec, and low DIBL = 24.18 mV/V. Furthermore, we demonstrate the characteristics of the CMOS inverter and the voltage transfer curve (VTC) indicates the acceptable voltage gain.