Investigation of HfO2/ZrO2 Superlattice Dielectric and High-k AION Interfacial Layer on Ferroelectric FinFET

In this study, we fabricated 12 nm-thick
$\mathbf{Hf}_{0.5}\mathbf{Zr}_{0.5}\mathbf{O}_{2}(\mathbf{HZO})/\mathbf{HfO}_{2}-\mathbf{ZrO}_{2}$
superlattice (SL-HZO) ferroelectric FinFET (Fe-FinFET) with
$\mathbf{SiO}_{2}/\mathbf{AlON}$
interfacial layers (IL) for comparison. Compared to conventional HZO, SL-HZO Fe-FinFET shows a larger memory window (MW). Meanwhile, the AION-based device owns lower operation voltage due to a more significant voltage drop across the FE layer. Overall, SL-HZO Fe-FinFET with AION IL unleashes the potential of FeFET memory, enabling both low power consumption and a large MW.