An Integrated LNA and SPDT Switch with a Notch Filter in 65-nm SOI CMOS Technology

This paper presents a front end module (FEM) with an integrated low noise amplifier (LNA) and a single-pole doublethrow (SPDT) switch using a 65-nm SOI CMOS technology. For input signals of different amplitudes, the LNA is designed with a main path and a bypass path. In addition, a novel notch filter is inserted between the switch and the LNA to filter out interference while greatly optimizing the input matching and noise performance of the FEM. In the 5.15 to 5.925 GHz, the FEM achieves a gain (S21) of 15 dB, noise figure (NF) of 1.72 dB, bypass path attenuation of 7.5 dB. In transmit mode, the insertion loss (IL) is less than 0.28 dB, the isolation(ISO) is better than 36.8 dB, and the input 0.1dB compression point (IP0.1dB) is 31.2dBm.