Amplification Gain of Nano-node Channel-width nMOSFETs with Thermal Annealing Treatments of DPN Processes

Decoupled-plasma nitridation technology after depositing a high-k layer at the advanced nano-node processes is helpful to improve the integrity of the gate dielectric, but the higher annealing temperature is possible to degrade the integrity of the channel surface for electron carriers if the annealing time is not controlled well. These sensed consequences in analysis reflect on the drive current and voltage gain.