Gain Efficiency of 28 nm-node Various Channelwidth pMOSFETs under Nitrogen Concentration of DPN Treatment

According to the sensed data analyzed, the denser nitrogen concentration in treatment is beneficial to the drive current, but it is possible to degrade the integrity of the channel surface. Using several channel-width pMOSFETs as tested devices, the G
m
-values are decreased as the channel widths are decreased. However, the intrinsic voltage gain does not show the same trend due to the contribution of output channel impedance r
o
.