Efficiency Analysis of Cylindrical CNT MOSFET

This article shows efficient analysis of cylindrical Carbon Nanotube Metal Oxide Semiconductor Field Effect Transistor (CNTFET). Technology advancements have led to the nanometer-scale scaling of transistors. The progression has led to inquiries into the nanoscale devices' structure Here we analyze the relationship between drain current and drain voltage, sub band energy profile of cylindrical CNT MOSFET, and variations of mobility and conductivity of CNTFET. Sub band energy profile is determined by the plot of band edge versus position. This analysis is done for different diameter of carbon nanotubes and for varying voltages.