Investigation of ZnO/Graphene/Si Based UV Photodetectors for Civil and Military Applications

In this work, the study involves simulations and performance analysis of UV photodetector based on ZnO/Graphene/Si heterojunction. The main objective is to investigate various electrical and optical parameter such as band structure profile, electrical field profile, quantum efficiency , illumination to dark current ratio. The silvaco atlas TCAD tool was used to perform simulation for the UV detection. The photodetector exhibits an external quantum efficiency and responsivity of 99% and 0.7 A/W respectively, at wavelength of 300 nm and temperature 300 K. Moreover, illumination and dark current values 10
^-7
A and 10
^-17
A were obtained for this device that provide valuable insights into its behaviour and potential applications.