A Review of Circuit Models for GaN Power Devices

GaN devices offer superior performance over Si devices, such as higher mobility, breakdown voltage, switching speed and per-width power density. In the future, GaN devices are expected to surpass Si devices in almost all performance indicators, thereby achieving high-speed and efficient power electronic systems (PES). The model of GaN device is a useful and necessary tool to analyze and evaluate its impact on circuit and system performance, which can help researchers design new PES. This paper reviews latest advances on the models of GaN power devices, and discusses the working principles of GaN, the classification and contributions of GaN model, for understanding the significance of these recent developments. In addition, this paper also considers the challenges and problems encountered in the modeling and application of GaN devices, such as self-heating effect, trap effect and short channel effect, providing guidance for future modeling. This review helps readers understand and use the GaN model to achieve more effective design of GaN-based converters.