Study on the effect of stray parameters on the IGCT commutation characteristics of high power three-level active neutral-point-clamped converter

Because the integrated gate commutated thyristor (IGCT) has high voltage and large current output characteristics, it is often used as an important element for efficient and reliable operation of large-capacity converters. The stray parameter in the circuit loop will seriously affect the dynamic characteristics of IGCT turn on and turn off process, which increase the voltage stress and the device loss, and even damage the device due to peak voltage or current. This Paper analyzes the converter circuit of the high-power three-level converter, and considers the influence of stray parameters on the peak voltage and current performance of the IGCT device. An improved modulation strategy is proposed to effectively suppress the spike voltage and current. Simulation and experimental results verify the correctness of the theoretical analysis, and the oscillation is effectively suppressed.