AlGaN/GaN HEMT based RF Switch Model

Indigenous AlGaN/GaN high electron-mobility transistor (HEMT) based RF switch model has been developed using measured data for various fabricated devices of different dimensions up to X band. Parameters of equivalent circuit of devices have been extracted using measured data. Switch model has been developed and verified in both ON and OFF state using measured data of different gate width varying from 200 µm to 1080 µm of devices. The devices have been fabricated using indigenous SSPL 0.25 µm GaN HEMT technology. This method consists of direct determination of both the extrinsic and intrinsic parameters. This model is very accurate, and it fits the S-parameters very well up to X band.