Turn-off Characteristics of Inductive Power Transfer Systems with LCC-S Compensation

The turn-off characteristics of SiC MOSFETs are one of the main elements of the electrical stress study of inductive power transfer (IPT) systems, which is important for safe and efficient operation of the IPT system. First, this paper analyzes the mathematical model of the IPT system and models the turn-off cur-rent considering higher harmonics; then, the turn-off loss model of SiC MOSFETs is established based on the datasheet and the generality of the loss model in SiC MOSFET applications is verified. Finally, an LCC-S compensated IPT system with a power of 1 kW is built for experiments, and the experimental results demonstrate that the SiC MOSFET applied to the IPT system has a constant turn-off current value of 7.3 A and a constant turn-off loss value of 11.5 μJ.