Design and analysis of V-Band Low Noise Amplifier for High Speed Data Application using GaAs pHEMT Process Technology

This article is help to addresses the design and Layout of Low Noise Amplifier at V-Band frequency range (@60GHz) for high-speed data application. Designed by 0.15um ft is 60GHz with fmax 100GHz GaAs pHEMT process technology. LNAs are critical devices that operate on the receiver side because the received signal is very weak and highly affected by environmental noise. The LNA's goal is to accomplish higher performance at lower operating voltages by amplifying the received signal enhanced in terms of gain as well as noise figure that are characteristic of a designed LNA (Low Noise Amplifier) structure. The characterized analysis of this amplifier is focused on most particularly by considering different factors like its noise figure, gain, dynamic range, matching, stability, and return loss. Design simulation and optimization are done using ADS Keysight. Simulations are founded on performance analysis carried out at varying temperatures. Achieved the LNA gain is up to 15 dB, and noise figure is under 4.5 dB, and about the stability, it is unconditionally stable from 0 GHz to fmax (ie. Up to 100GHz) as referred to the RF design principles. Since the process technique requires 4 volts, we employed a 4 volt supply with a 48 milliamp operational current.