Low-Power Field Emission Arrays with Sharp Emitters

Fabrication and characterization of high-density silicon field emitter arrays with dull and sharp tips are presented using high-throughput electron-beam lithography. Both arrays achieved a maximum current density of 4.5 A.cm
⁻²
. The array with sharp tips had a turn-on voltage of 45 V while the one with dull emitters had a turn-on voltage of 108 V. The required voltage to achieve a 4
$\mu \mathrm{A}$
emission current for the sharp emitter array was 120 V, less than half of the required voltage for the array with dull emitters. The field enhancement factors for the arrays with dull and sharp emitters are calculated as 92 and 267, respectively.