Electron-Beam Gate-Controlled Field-Effect Transistor

Innovative devices based on metal-oxide-semiconductor field-effect transistor (MOSFET) have greatly promoted the development of science and technology. It is of great scientific significance and practical value to explore the new device and new control mechanism based on FET. In this paper, a novel electron-beam gate-controlled FET (E-FET) based on
$\text{SiO}_{2}/\text{Si}$
structure is proposed and verified by establishing the device model, simulating the device characteristic, and testing the device response. The results show that both the incident energy and the irradiation dose of electron-beam can control the switch and the channel current of E-FET, which could be used to monitor the potential and control the switch of spraying charged particles in the application of electrostatic discharge (ESD) active protection. Therefore, this work provides a new design of the FET controlled by the electron-beam induced charge accumulation that could be used as the monitoring of charge accumulation and the switch of spraying charged particles in ESD active protection for the vacuum electronics of spacecraft.