Simulation of RTD Material System

As a promising alternative in the development of a tunable and compact terahertz radiation source for terahertz wireless communication, semiconductor THz radiation sources have attracted many attentions. Among them, the resonant tunneling diode (RTD) is a kind of nano-device with negative resistance characteristics and becomes an important candidate for terahertz sources. It is very important to select the material before use to improve the performance of this kind of device. GaN materials have higher electron effective mass, wider bandgap and higher electron saturation velocities, the RTD based on GaN is more suitable for room temperature and high power THz source.