GaN Nanoscale Air-Channel Diodes with High Rectification Ratio and Irradiation Resistance

Nanoscale air-channel transistors (NACTs) have drawn much attention due to their outstanding high-frequency properties and high switching speeds. However, NACTs remain limited by low currents and instabilities compared to solid-state devices. GaN has been one of the best cathode materials since its low electron affinity and many other excellent properties. Here, we report a vertical GaN nanoscale air-channel diode (NACD) prepared by IC-compatible technology. The device has a large field emission current of 5.02 mA@3 V and a field emission turn-on voltage of 0.6 V in an ambient environment. Importantly, the device possesses a high rectification ratio up to 10
⁵
. Furthermore, irradiation resistance of the device has been examined by fast neutron irradiation tests. Our work guides future applications of NACTs in logic circuits and radiation environments and will promote the progress of its practical applications.