Design of a 110GHz to 170GHz terahertz wideband Low Noise Amplifier Chip

This paper presents a design of terahertz wideband low noise amplifier by simulation. On-chip capacitors are used for interstage isolation, sector lines are used for RF bypass, and microstrip lines are used for matching circuits. In order to improve the device gain, a multi-stage amplifier circuit is adopted, and finally a five-stage LNA is realized in the 110–170 GHz frequency band. HFSS and ADS simulation software are used to jointly simulate the whole LNA circuit. The simulation results show that at 140 GHz, the small signal gain is 28 dB, the noise figure is 4.6 dB, and the 3 dB bandwidth is 40 GHz (120–160 GHz), which validate of the design.