Analytical Investigation of I-V Characteristics of Gated Nanowire Field Emitters

The investigation of I-V characteristics of gated nanowire field emitters usually requires complicated calculation. In this study, we proposed analytical formulas to better analyze I-V characteristics of gated nanowire field emitters. This model has been validated by Comsol Multiphysics. This finding provides a simple and accurate method to optimize the structure parameters of gated nanowire field emitters and solve the calculation problems requiring enormous computational resources.